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Consider a silicon pn junction diode with an applied reverse-biased voltage of VR= 5V. The doping concentrations are Na=Nd=4 ×10^16 cm^-3 and the cross-sectional area is A=10^-4 cm^2. Assume minority carrier lifetimes of τ0=τn 0=τp 0=10^-7 s. Calculate the ( a ) ideal reverse-saturation current, (b) reverse-biased generation current, and ( c ) the ratio of the generation current to ideal saturation current. | Numerade
10 个月之前
numerade.com
An ideal silicon pn junction diode has a cross-sectional area of A=5 ×10^-4 cm^2. The doping concentrations are Na=4 ×10^15 cm^-3 and Nd=2 ×10^17 cm^-3 . Assume that Eg=1.12 eV as well as the diffusion coefficients and lifetimes are independent of temperature. The ratio of the magnitude of forward- to reverse-biased currents is to be no less than 2 ×10^4 with forward- and reverse-biased voltages of 0.50 V, and the maximum reverse-biased current is to be limited to 1.2 μA. Determine the maxim
1 个月前
numerade.com
SOLVED:A long silicon pn junction diode has the following parameters: Nd=10^18 cm^-3, Na=3 ×10^16 cm^-3, τn 0=τp 0=τ0=10^-7 s, Dn=18 cm^2 / s, and Dp=6 cm^2 / s . A light source is incident on the space charge region such as shown in Figure P 8.35, producing a generation current density of JG=25 mA / cm^2. The diode is open circuited. The generation current density forward biases the junction, inducing a forward-bias current in the opposite direction to the generation current. A steady-sta
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