第一节：（4）逻辑工艺线上量测简介_cd bar-CSDN博客
2022年6月11日 · 临界尺寸sem（cd-sem：临界尺寸扫描电子显微镜）是一种专用系统，用于测量在半导体 晶片上形成的精细图案的尺寸。 降低 CD -SEM电子束的能量可以减少由于充电或电子束辐照而对样品造成的损坏。
什么是Wafer的CD线宽 - 知乎 - 知乎专栏
2020年9月30日 · CD线宽的全名是Criticlal dimension，可以用来测量Pillar Pattern，L/S Pattern，Isolation Pattern等。 而且Photo和Etch也常用做工艺Margin的评价，Photo有CDU，EL，DOF等参数来确认margin的大小，可以用来做上下层的overlay matching。
研究SEM轮廓与CD-SEM匹配 - 知乎 - 知乎专栏
2023年9月22日 · sem-cd图像采集和cd算法. 扫描电子显微镜（sem）产生的原始图像取决于许多参数（电子束强度、电压、扫描方向、视场、像素大小、帧数、失真…），这些参数直接影响信号的质量和形状。sem图像基本上是一个灰度图像，突出显示所测图案的边缘。
【转载】第一节：（4）逻辑工艺线上量测简介_cdsem测量原理_Chip
其原理是通过入射电子轰击待测样品表面，样品表面原子吸收入射电子并激发产生二次电子（Secondary Electron），通过收集到的二次电子，将探测到的物理信号最终转化成样品图像信息。. 相较于入射电子，二次电子的能量相对较低，所以只有表面产生的二次电子 ...
CD Challenges. Advanced 3D transistor structures present unique challenges to existing metrology due to critical measurements that must be made on vertical structures, as well as more complex geometric structures. High aspect ratio structures …
Review of CD Measurement And Scatterometry. Ph Thony, D. Herisson, D. Henry, Ermes ... No image of the target. ... Line / space 50 / 190. 40 45 50 55 60 65 12345678910111213. dies CD. SEM measurement scattero top CD middle CD Bottom CD. 65 nm gate : e-beam lithography.
The limits of CD metrology - ScienceDirect
2006年4月1日 · The line/space images show a spectrum of capability, but demonstrate the clear ability of CD SEM to resolve the edges of the smallest lines we made. It is worth mentioning that issues such as resist shrinkage/swelling, charging, and image bias that are present in today’s SEM’s remain when imaging 32 nm node features.
An optimized parameter guidance system for line/space CD …
2019年3月26日 · In this paper, we propose a guidance system to provide an optimized set of metrology parameters given a line/space pattern image or images of scanning electron microscope (SEM). The proposed system models input condition with a comprehensive set of model parameters and then statistical analysis is done based on modeling outputs.
Line/Space CD Variation Analysis of Metal 1 Trench Pitch walking measurement require to identify each line and space 2016.Nov, Greg McIntyre Patterning and Lithography update
In this study, data from a series of photoresist line/space patterns featuring programmed line width roughness measured by critical dimension small angle x-ray scattering (CD-SAXS) is presented. For samples with periodic roughness, CD-SAXS provides the wavelength and amplitude of the periodic roughness through satellite diffraction peaks.