2N5551 Transistor Pinout, Features, Equivalent & Datasheet
2017年12月21日 · The 2N5551 is an NPN amplifier Transistor with an amplification factor of 80 when the collector current is 10mA. It also has decent switching characteristics so can amplify low-level signals.
This device is designed for general−purpose high−voltage amplifiers and gas discharge display drivers. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
NPN high-voltage transistors 2N5550; 2N5551 FEATURES •Low current (max. 300 mA) •High voltage (max. 160 V). APPLICATIONS •Switching and amplification in high voltage applications such as telephony. DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. PINNING PIN DESCRIPTION 1 ...
2N5551 Datasheet(PDF) - ON Semiconductor
Part #: 2N5551. Download. File Size: 188Kbytes. Page: 6 Pages. Description: mplifier Transistors(NPN Silicon). Manufacturer: ON Semiconductor.
2N5551 Transistor Pinout, Equivalent, Uses, Features
2019年4月28日 · This article explains 2N5551 transistor pinout, equivalent, uses, features, explanation, where and how to use this transistor and what to do to make this transistor perform long term in an electronic circuit.
2N5551 Transistor: Datasheet, Pinout, Equivalent, Applications
2021年9月17日 · 2N5551 can be described as an NPN amplifier transistor. Its amplification factor (hfe) is 80 when the current of the collector is 10mA. It also has good shifting properties thus allowing it to amplify low-level signals. Today, easybom will introduce the details about it.
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Figure 5. Temperature Coefficients. Figure 6. Switching Time Test Circuit. Figure 7. Capacitances.
2N5551. ELECTRICAL CHARACTERISTICS (Ta=25 de g C Unless Otherwise S p ecified) 2N5551 DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT D y namic Characteristics Small Si g nal Current Gain hfe IC=1mA, VCE=10V 50 - 200 f=1KHz Transition Fre q uenc y ft VCE=10V,IC=10mA, 100 - 300 MHz f=100MHz Out p ut Ca p acitance Cob VCB=10V, IE=0 - - 6.0 pF
2N5551 Datasheet (PDF) - Fairchild Semiconductor
Part #: 2N5551. Download. File Size: 222Kbytes. Page: 5 Pages. Description: NPN General Purpose Amplifier. Manufacturer: Fairchild Semiconductor.
2N5551 SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N5550 2N5551 UNITS Collector-Base Voltage VCBO 160 180 V
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