The global power MOSFET market is on the brink of a substantial valuation, projected to reach USD 24,700 million by 2023. The growth is primarily driven by the burgeoning interest ...

A finished device: Optical microscope image of the transistor (left) and an ultra-scaled vertical nanowire (right). (Courtesy: Y Shao) A new transistor made from semiconducting vertical nanowires of ...

DETROIT -- An estimated 208,000 electric vehicles are being recalled by Hyundai and Kia because of an issue with a transistor that can lead to a loss of drive power. According to the Associated ...

The new type of transistor, known as the "cryo-CMOS transistor," is optimized to operate at temperatures under 1 K and emit near-zero heat. A new type of transistor can dissipate almost zero heat ...

Abstract: This study investigates neutron-induced displacement damage in Bipolar Junction Transistors (BJTs) using TCAD models informed by Deep-Level-Transient-Spectroscopy (DLTS) data. These models ...

Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States ...

Transistors can have crazy device to device ... The forward current gain for specimens within the same type of BJT might vary over a 3-to-1 or 4-to-1 range. Variations in values of parameters ...

Abstract: An insulated-gate bipolar transistor (IGBT) has multiple degradation mechanisms; it is a challenge to accurately integrating multiple signals to capture the device’s degradation patterns and ...