Power-converter density and efficiency can be improved using techniques like GaN HEMTs in a half-bridge configuration.

A Bengaluru court convicted three Bhatkal youths for plotting nationwide blasts during President Obama's 2015 India visit.

After dominating the electronics industry for decades, conventional silicon-based transistors are gradually approaching their ...

SiC and GaN are promising alternatives, with much larger band gaps and breakdown voltages, as much as 10 times larger than ...

Significant power, performance, and density improvements TSMC has revealed further details about its N2 (2nm-class) ...

Ideal Power Inc. (Nasdaq: IPWR) ("Ideal Power," the "Company," "we," "us" or "our"), developer and innovative provider of the highly efficient and broadly patented B-TRAN® bidirectional semiconductor ...

TMR is not a new idea in the world of ASIC design. It was published as far back as 1962 in the IBM Journal of Research and ...

BUSINESS WIRE helps companies to disseminate their full text press releases ... Kioxia Corporation, a world leader in memory solutions, today announced the development of OCTRAM (Oxide-Semiconductor ...

When does the golden rule of semiconductor scaling finally break? How small can a transistor be? And what in the world is ...

TSMC revealed additional details about its N2 (2nm-class) fabrication process at the IEEE International Electron Device ...

California SiC factory funding; IEDM announcements, including 2nm and 2D materials advances from Intel and TSMC, CFETs, and ...