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A discovery by an international team of scientists has revealed room-temperature ferroelectric and resistive switching behaviors in single-element tellurium (Te) nanowires, paving the way for ...

Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States ...

Abstract: An insulated-gate bipolar transistor (IGBT) has multiple degradation mechanisms; it is a challenge to accurately integrating multiple signals to capture the device’s degradation patterns and ...

Need to switch something on or off using a microcontroller? Using a transistor is one of the best ways to do this, but how exactly do you design properly for transistor switching? [Ben Krasnow ...