Nexperia has announced the launch of 16 new 80 V and 100 V power MOSFETs in the copper-clip CCPAK1212 package.

The benchmark PSMN1R0-100ASF is a 0.99mOhm 100V power MOSFET capable of conducting 460A and dissipating 1.55KW of power, yet in a CCPAK1212 package footprint that occupies only 12mm x 12mm of board ...

Nexperia has launched 16 new 80V and 100V power MOSFETs in the innovative copper-clip CCPAK1212 package, delivering improved power density and performance.

打开datasheet，哪些参数是需要重点关注的，哪些是需要参考的，这是硬件设计的基本功。今天我们的主角是MOSFET，接下来我们就分几篇文章介绍一下MOSFET选型时的重点参数关注以及讲解。 我们今天重点讲解Vdss，Vgss，Id，Idm参数。 datasheet中的电气参数整体分两大 ...

Power MOSFETs are specialized metal oxide semiconductor field-effect transistors (MOSFET) designed to handle significant power levels. Although early power MOSFET manufacturing used several different ...

TrenchFET® 器件采用PowerPAK® SO-8S封装，RthJC低至0.45 °C/W，ID高达144 A，从而提高功率密度 美国 宾夕法尼亚 MALVERN、中国 上海 — 2024年11月20日 — 日前，威世科技Vishay Intertechnology, Inc.宣布，推出采用PowerPAK® SO-8S（QFN 6x5）封装的全新150 V TrenchFET® Gen ...

随着汽车产业加速朝向智慧化以及互联系统的发展，强茂推出最新车规级60 V N通道MOSFETs系列，采用屏蔽栅槽沟技术(SGT)来支持汽车电力装置。此系列产品具备卓越的性能指标(FOM)、超低导通电阻(RDS(ON))以及最小化的电容，能有效提升汽车电子系统的性能与能源 ...

How to determine the no. of parallel MOSFET required for charging and dis-charging for BMS.

has introduced a new 150 V TrenchFET Gen V n-channel power metal-oxide semiconductor field-effect transistor (MOSFET) in the PowerPAK SO-8S (QFN 6x5) package. Compared to previous-generation devices ...

The new 150 V TrenchFET® Gen V n-channel power MOSFET increases efficiency with the industry’s lowest RDS(ON) of 5.6 mΩ. Vishay Intertechnology, Inc. has launched a new 150 V TrenchFET® Gen V ...