What is Atomic Layer Etching? Atomic layer etching (ALE) is a highly controlled and selective etching technique that removes material layer by layer at the atomic scale. It is a cyclic process that ...

Atomic layer etching (ALE) is the reverse of atomic layer deposition (ALD). ALE can be achieved using sequential, self-limiting thermal reactions. We have recently demonstrated Al 2 O 3 ALE [1-3] and ...

As layers become thinner to allow for the next-generation of semiconductor devices, there is a need for ever more precise process control to create and manipulate these layers. The PlasmaPro 100 ALE ...

The Steven M. George research group concentrates on surface chemistry, thin-film growth & etching, and nanoscale engineering. We focus on atomic layer deposition (ALD), atomic layer etching (ALE), and ...

Atomic Layer Etching (or ALE) is a sophisticated etch method enabling outstanding depth control on shallow features. As device feature size decreases, ALE is required to achieve the accuracy needed ...

Oxford Instruments Plasma Technology PlasmaPro 100 Cobra 300 ICP RIE ALE The Oxford Instruments Cobra is perhaps the highest performance R&D etch system in the academic world. Our system is configured ...

and Atomic Layer Etching (ALEt). The center serves also as a valuable resource to other fields of research that require state-of-the-art techniques for thin film characterisation and resolving surface ...

and Atomic Layer Etching (ALEt). The center also serves as a valuable resource to other fields of research that require state-of-the-art techniques for thin film characterization and resolving surface ...

This, in turn, necessitates controllability over the etching process at the atomic-layer (angstrom) level. In addition, the likes of 3D-NAND(4) and 3D-DRAM*5structures are used for semiconductor ...

The reaction, driven by a two-photon process, removes carbon atoms selectively from the top atomic layer. This breakthrough ... The effects of sub-monolayer laser etching on the chemical and ...